Ge Substrate (100) 5x 5x0.4 mm, 1 SP, Undoped ,N-type.R>50 ohm.cm

Specifications

• Growing Method:            CZ
• Wafer Size:                     5x5x0.4 mm
• Surface Polishing:           one side epi polished
• Orientation:                     (100)
• Surface roughness:         < 8 A ( by AFM)
• Doping:                           Undoped
• Conductor type:              N-type
• Resistivity:                      >50 Ohms/cm (If you would like to measure the resistivity accurately,
                                       please order our Portable 4 Probe Resistivity Testing Instrument.)
• Package:                        under 1000 class clean room  in wafer container