Ge Substrate: (100)+/- 2 degree, 10x3 x 0.5 mm , 2SP, P type Ga doped,R:10-15 ohm.cm

Ge Wafer Specification

• Growing Method:            CZ
• Wafer Size:                    10 x 3 x0.5 mm
• Surface Polishing:          two sides epi polished
• Orientation:                    (100)+/- 2 degree
• Surface roughness:         RMS or Ra:~ 10 A(By AFM)
• Doping:                           Ga doped
• Conductor type:              P-type
• Resistivity:                    10-15 Ohms/cm  (If you would like to measure the resistivity accurately,
                                      please order our Portable 4 Probe Resistivity Testing Instrument.)              
• Package:                        under 1000 class clean room  in wafer container     
  
  

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