Ge Substrate: (100) 10x10 x 0.5 mm , 1SP, P type Ga doped,R:1-5 ohm.cm

Ge Wafer Specification

• Growing Method:            CZ
• Wafer Size:                    10 x 10 x0.5 mm
• Surface Polishing:          one side epi polished
• Orientation:                    (100) 
• Surface roughness:         RMS or Ra:~ 10 A(By AFM)
• Doping:                          Ga doped
• Conductor type:             P-type
• Resistivity:                     1-5 Ohms/cm (If you would like to measure the resistivity accurately,
                                      please order our Portable 4 Probe Resistivity Testing Instrument.)               
• Package:                        under 1000 class clean room  in wafer container     
  
  

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