Ge single crystal substrate,undoped (100)5x5x0.4-0.5mm,2sp, R>50 ohm.cm

Specifications

• Growing Method:           CZ
• Wafer Size:                    5x5x0.4-0.5 mm
• Surface Polishing:          Two sides epi polished
• Orientation:                     (100)
• Surface roughness:       RMS or Ra:~ 10 A(By AFM)
• Doping:                           Undoped
• Conductor type:              N-type
• Resistivity:                      >50 Ohms/cm (If you would like to measure the resistivity accurately,
                                        please order our Portable 4 Probe Resistivity Testing Instrument.)
• Package:                        under 1000 class clean room  in wafer container     
  
  

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