Ge single crystal substrate (100)N-type ,undoped ,10x10x0.5mm,2sp, R>40 ohm.cm

Specifications

• Growing Method:           CZ
• Wafer Size:                   10x10x0.5 mm
• Surface Polishing:         two  sides  epi polished
• Orientation:                   (100)
• Surface roughness:        RMS or Ra:~ 10 A(By AFM)
• Doping:                          Undoped
• Conductor type:             N-type
• Resistivity:                     >  40 Ohms/cm  (If you would like to measure the resistivity accurately,
                                      please order our Portable 4 Probe Resistivity Testing Instrument.)               
• Package:                       under 1000 class clean room  in wafer container     
  
  

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