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MTI | SKU:
GPUc50D04C2R1pt5US
GaP Wafer, undoped (111) 2"x0.4 mm, 2sp,
€688,85
Unit price
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Unavailable
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GaP Wafer, undoped (111) 2"x0.4 mm, 2sp,
€688,85
Unit price
/
Unavailable
GaP Wafer, undoped (111) 2"x0.4 mm, 2sp,
MTI
- GaP single crystal wafer,
- Size: 2" diameter x 0.4mm,
- Doping: undoped
- Conducting type:
- Orientation: (111)
-
Polished: two sides polished
with P terminated side facing down in the box.
- Surface finish (RMS or Ra) : < 8A
Typical Physical Properties |
||
Crystal Structure |
Cubic. |
|
Growth Method |
CZ (LEC) |
|
Density |
||
Mobility: |
150cmE2/Vs |
|
Thermal Expansion |
|
|
Dopant |
undoped |
|
Crystal growth axis |
<111> |
|
Conducting Type |
N |
|
Carrier Concentration |
2.7 x1016 /cm3 |
|
Resistivity |
1.53 ohm.cm |
|
EPD |
3.4x104 |
|
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