MTI  |  SKU: GPUc50D045C2US

GaP wafer undoped (111) 2" diaX 0.45mm 2sp,R> 7 x10^7 ohm.cm,Semi-Insulating

€753,25

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GaP wafer undoped (111) 2" diaX 0.45mm 2sp,R> 7 x10^7 ohm.cm,Semi-Insulating

MTI


  • GaP single crystal wafer,
  • Size: 2" diameter(+/_0.15mm) x 0.45mm(+/_ 0.05mm),
  • Doping: undoped,
  • Conducting type: N-type,
  • Orientation: (111)+_30'
  • Flats: SEMI: PF:<110>
  •                  SF:<112>
  • Mobility: 150 cm^2/Vs
  • Resistivity: >7 x10^7 ohm.cm
  • Carrier Concentration: 9 x10^8 cm^-3
  • EPD:<=8x10^4 cm^-2
  • Polished: two sides polished.
  • Surface finish (RMS or Ra) :  < 8A

Typical Physical Properties

Crystal Structure

Cubic.            a =5.4505Å

Growth Method

CZ (LEC)

Density

4.13  g/cm3

Melt Point

1480  oC

Thermal Expansion

5.3 x10-6  / oC

Dopant

S doped

undoped

Crystal growth axis

<111>  or <100>

<100> or <111>

Conducting Type

N

N

Carrier Concentration

2 ~ 8 x1017 /cm3

4 ~ 6 x1016 /cm3

Resistivity

~ 0.03 ohm-cm

~ 0.3 ohm-cm

EPD

< 3x105

< 3x105


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