GaP wafer, N type, S doped, (100), 2 deg toward [101] +/- 0.5 deg, 48 mm in dia x 0.25 mm, 1sp

Typical Physical Properties

Crystal Structure

Cubic.            a =5.4505 ?/FONT>

Growth Method

CZ (LEC)

Density

4.13  g/cm³

Melt Point

1480  ^oC

Thermal Expansion

5.3 x10^-6  / ^oC

Dopant

S doped

undoped

Crystal growth axis

<111>  or <100>

<100> or <111>

Conducting Type

N

N

Carrier Concentration

(2 ~ 12) x10¹⁷ /cm³

4 ~ 6 x10¹⁶ /cm³

Resistivity

~ 0.03 ohm-cm

~ 0.3 ohm-cm

EPD

< 3x10⁵

< 3x10⁵