MTI  |  SKU: GAZna50D05C2US5

GaAs Wafer - Growing Method: VGF (100) Zn doped P-type, , 2"x0.5 mm, 2sp, (8.62-9.38) x 10^17 /cm^3

€366,85

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GaAs Wafer - Growing Method: VGF (100) Zn doped P-type, , 2"x0.5 mm, 2sp, (8.62-9.38) x 10^17 /cm^3

MTI

GaAs single crystal wafer
Growing Method: VGF
Orientation: (100)
Size: 2" dia x 0.5mm
Polishing: two sides polished
Doping: Zn doped
Conductor type: S-C-P
Carrier Concentration: (8.62-9.38) x 10^17 /cm^3

Mobility: 168-173 cm^2/V.S

EPD: <5000/cm^2

Resistivity: (3.96-4.2)x10^-2 ohm.cm

Ra(Average Roughness) : < 0.4 nm

Note: EPI ready wafers

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