GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 1SP
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GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3&qu...
GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, 1SP
MTI
GaAs single crystal wafer
Growing Method: VGF
Orientation: (100)
Size: 3" dia x 0.5mm
Polishing: one side polished
Doping: undoped
Conductor type: Semi-Insulating
Resistivity: (1.35-4.21)x10^8Ohm.cm
Mobility: 4360-5640cm^2/V.S
EPD: <5000cm^-2
Primary Flat: EJ(0-1-1)
Secondary Flat: EJ(0-11)
Ra(Average Roughness) : < 0.4 nm
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