MTI  |  SKU: GAUa50D05C1US5

GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 1SP

€332,35

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GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 1SP

MTI

  • GaAs single crystal wafer
  • Growing Method:              VGF
  • Orientation:                      (100)+/-0.5 degree
  • Size:                                2" dia x 0.5mm
  • Polishing:                         single  side  polished
  • Doping:                            un- doped
  • Conductor type:                Semi-insulating
  • Ra(Average Roughness) :   < 0.4 nm
  • Mobility:                           4470-6540 cm^2/V.S
  • Resistivity:                       (0.96-5.34) x 10^8  ohm.cm
  • EPD:                               <5000cm^2
  • EPI ready surface and packing  

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