GaAs Wafer - Growing Method: VGF (100) P type Zn doped , 3"x0.625 mm, 1sp

GaAs single crystal wafer
Growing Method:              VGF
Orientation:                      (100)
Size:                                3" dia x 0.625 mm
Polishing:                         one side polished
Doping:                            Zn doped
Conductor type:               S-C-P
Carrier Concentration:     (0.74 - 3.60) x 10^19 /cm^3
Mobility:                            59-88 cm^2/V.S
EPD:                                < 5000/cm^2

resistivity:                         (2.92 - 9.70)x10^-3 ohm.cm
Note: EPI ready wafers

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