MTI  |  SKU: GAZncB50D04C2US5

GaAs, Growing Method: VGF ,(111)B , Zn-doped, P-type, 2" dia x 0.4 mm, 2sp

€366,85

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GaAs, Growing Method: VGF ,(111)B , Zn-doped, P-type, 2" dia x 0.4 mm, 2sp

MTI

  • GaAs single crystal wafer
  • Growing Method: VGF
  • Orientation: (111)B
  • Size: 2" dia x 0.4 mm 
  • Polishing: two sides polished
  • Doping: Zn-doped
  • Conductor type: S-C-P
  • Resistivity: (7.49-8.12)E-2 ohm.cm
  • Carrier Concentration: (3.70-4.01)E17cm^-3
  • Mobility: (208-209) cm^2/V.S
  • Ra(Average Roughness) : < 0.4 nm
  • Note:  EPI ready wafers

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