MTI  |  SKU: GAZncA50D05C2US5

GaAs, Growing Method: VGF ,(111)A, Zn-doped, P-type, 2" dia x 0.5mm, 2sp - GAZncA50D05C2US5

€343,85

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GaAs, Growing Method: VGF ,(111)A, Zn-doped, P-type, 2" dia x 0.5mm, 2sp - GAZncA50D05C2US5

MTI

  •  GaAs single crystal wafer
  • Growing Method: VGF
  • Orientation: (111)A
  • Size: 2" dia x 0.5mm 
  • Polishing: two sides polished
  • Doping: Zn-doped
  • Conductor type: S-C-P
  • Resistivity: (6.82-7.58)E-3 ohm.cm
  • Carrier Concentration: (1.07-1.26)E19cm^-3
  • Mobility: 73-77 cm^2/V.S
  • Ra(Average Roughness) : < 0.4 nm
  • Note:  EPI ready wafers

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