MTI  |  SKU: GAUa101005S2US

GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, 2SP

€74,75

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GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, 2SP

MTI

    • GaAs single crystal wafer
    • Growing Method:               VGF
    • Orientation:                       (100)
    • Size:                                10x10 x 0.5mm 
    • Polishing:                          two sides polished;
    •  Ra(Average Roughness) :   < 0.4 nm
    • Doping:                              undoped
    • Conductor type:                  Semi-Insulating
    • Resistivity:                         (0.6-2.0)E8 Ohm.cm
    • Mobility:                            5350-6380 cm^2/v.s.
    • EPD:                                 <5000/cm2

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