MTI  |  SKU: GAUa101005S1US

GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, 1SP

€67,85

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GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, 1SP

MTI

  • GaAs single crystal wafer
  • Growing Method:                VGF
  • Orientation:                       (100)                    
  • Size:                                10x10 x 0.5mm 
  • Polishing:                          one side polished; 
  •  Ra(Average Roughness) :  < 0.4 nm
  • Doping:                             undoped
  • Conductor type:                 Semi-Insulating
  • Resistivity:                        (0.65-3.24)E8 Ohm.cm
  • Mobility:                           4700-5630cm^2/v.s.
  • EPD:                               <5000/cm2

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