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MTI | SKU:
GATea0505035S1US
GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP
€40,19
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GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP
€40,19
Unit price
/
Unavailable
GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP
MTI
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (100)
- Size: 5 x 5 x 0.35 mm
- Polishing: one side polished
- Doping: Te doped
- Conductor type: N-type
- Carrier Concentration: (3.04-5.98) x 10^17 /cm^3
- Mobility: (3330-3850) cm^2/V.S
- Resistivity: (3.14-5.34) E-3 ohm-cm
- EPD: < 5000 /cm^2
- Note: EPI polishing
- RMS < 5 Angstrom
