MTI | SKU:
OTF1200XPEC4LV50
1200C Max. PECVD Tube Furnace w/ 4 Channels Gas Delivery & Vacuum Pump - OTF-1200X-PEC4LV
€0,00
Unit price
/
Unavailable
Couldn't load pickup availability
Delivery and Shipping to EU
Delivery and Shipping to EU
We will add in the quotation, the shipping, insurance, customs clearance costs.
1200C Max. PECVD Tube Furnace w/ 4 Channels Gas Delivery & Vacuum Pump - OTF-1200X-PEC4LV
MTI
OTF-1200X-PEC4LV is acompact PE-CVD (Plasma Enhanced Chemical Vapor Deposition) tube furnace system, which consists of 300W RF plasma source, 2" or 3.14" O.D optional split tube furnace, 4 channels precision mass flow meter with gas mixing tank, and high-quality mechanical pump. The PE-CVD furnace is an ideal and affordable tool to deposit thin films or grow nanowire from a gas state (vapor) to a solid-state, and benefits:
- Lower temperature processing compared to conventional CVD.
- Film stress can be controlled by high/low frequency mixing techniques.
- Control over stoichiometry via process conditions.
- Offers a wide range of material deposition, including SiOx, SiNx, SiOxNy and Amorphous silicon (a-Si:H) deposition.
Specifications
Split Tube furnace
|
|
|
|
|
|
Vacuum Pump and valve
|
|
Optional Oilless Pump |
Please order the oilless pump for zero contamination:![]() |
Mass Flowmeter![]() ![]() EQ-GSL-LCD |
|
Temperature Controller |
|
Optional
|
|
Overall dimensions
|
|
Warranty
|
One year limited warranty with lift time support (Consumable parts such as processing tubes, O-rings, and heating elements are not covered by the warranty, please order the replacement at related products below.) |
Laptop, software & WiFi Control (Optional)
|
|
Compliance |
|