mti

MTI

Si Wafer (110) 2" dia x 0.5 mm, 1SP, P type, B doped,R:1-10 ohm-cm

MTI

Si Wafer (110) 2" dia x 0.5 mm, 2SP, P type, B doped, R:0.01-1.0 ohm-cm - SIBe50D05C2R001

MTI

Si wafer (110) 3 " dia x 0.5 mm, 1sp P type, B doped, resistivity: 1-10 ohm-cm

MTI

Si Wafer (110), 2" dia x 0.5 mm t, 2SP, P type/ B doped, R:0.1-1.0ohm-cm

MTI

Si Wafer (110), 2" dia x 0.5 mm, 1SP, N type, P doped, R: 1-10 ohm-cm

MTI

Si Wafer (110), 2" dia x 0.5 mm, 2SP, N type, P doped R:0.05-0.5 ohm.cm

MTI

Si wafer (110), 3"dia x 0.5 mm, 1sp, N type, P doped, resistivity: 1-10 ohm-cm - SIPe76D05C1R1

MTI

Si Wafer (110), 4 " dia x 0.5 mm, 1SP, N Type (undoped, FZ R>1000 ohm-cm)

MTI

Si Wafer (111) 2" dia x 0.1 mm, 1SP, P type, B doped, R:1-10 ohm.cm - SIBc50D01C1R1US

MTI

Si Wafer (111) 2" dia x 0.279 mm, 1SP, P type, B doped, R:1-10 ohm-cm - SIBc50D0279C1R1

MTI

Si Wafer (111) 2" dia x 0.28 mm, 1SP, P type, B doped, R:0.1-10 ohm-cm - SIBc50D028C1R01

MTI

Si Wafer (111) 2" dia x 0.5 mm, 1SP, P type, B doped, R:1-10 ohm-cm - SIBc50D05C1R1

MTI

Si Wafer (111) 2" dia x 0.5 mm, 2SP, N type, As doped ,R:0.005-0.05 ohm.cm - SIAsc50D05C2R0005

MTI

Si Wafer (111) 2" dia x 0.5 mm, 2SP, N type, P doped ,R:0.005-0.05 ohm.cm

MTI

Si Wafer (111) 2" dia x 0.5 mm, 2SP, P type, B doped, R:1 - 10 ohm-cm - SIBc50D05C2R1

MTI

Si Wafer (111) 2" dia x 0.5mm, 1SP, FZ, Undoped, R> 10,000 ohm-cm - SIUc50D05C1R10000

MTI

Si wafer (111) 3 " dia x 0.5 mm, 1sp P type, B doped, resistivity: 1-10 ohm-cm - SIBc76D05C1R1

MTI

Si Wafer (111) 4 +/- 0.5 degree off , 4 " dia x 0.5 mm, 1SP, P Type, B doped, resistivity: 0.004-0.006 ohm-cm

MTI

Si Wafer (111) 4 +/- 0.5 degree off , 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities:1-10 ohm-cm

MTI

Si Wafer (111) miscut 0+/-0.5 degree, 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities:1-10 ohm-cm