mti

MTI

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities: 0.1 - 1.0 ohm-cm

MTI

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities: 1-10 ohm-cm

MTI

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities:0.01-0.1ohm-cm

MTI

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities>200 ohm-cm

MTI

Si Wafer (100), 4" dia x 0.5 mm, 1SP, N-type , Undoped with resistivities: >1,000 ohm-cm - SiUa101D05C1R1000

MTI

Si Wafer (100), 4" dia x 0.5 mm, 1SP, N-type , Undoped with resistivities: >5000 ohm-cm

MTI

Si Wafer (100), 4" dia x 0.5 mm, 1SP, N-type ,Undoped with resistivities:> 15,000 ohm-cm

MTI

Si Wafer (100), 4" dia x 0.5 mm, 1SP, N-type, Undoped with resistivities: 8000-9000 ohm-cm

MTI

Si Wafer (100), 4" dia x 0.5 mm, 1SP, N-type, Undoped with resistivities:> 10,000 ohm-cm

MTI

Si Wafer (100), 4" dia x 0.5 mm, 2SP, N-type , Undoped with resistivities: >15,000 ohm-cm

MTI

Si Wafer (100), 4" dia x 0.5 mm, 2SP, N-type, Undoped, resistivities: > 1000 ohm-cm - SiUa101D05C2R1000

MTI

Si Wafer (100), 4" dia x 0.5 mm, 2SP,N-type, Undoped with resistivities: >10,000 ohm-cm

MTI

Si Wafer (100), 4"dia x 0.525 mm, 1SP, N Type, P doped, Resistivities: 1-10 ohm-cm - SiPa101D05C1R1US

MTI

Si Wafer (100), 5 " dia x 0.625mm, 1SP N-type ,P- doped, R:1-10 ohm-cm,

MTI

Si wafer (100), 6 " dia x 0.65 - 0.7 mm, 1SP P type (B doped) with resistivities: 1-30ohm-cm - SIBa152D0675C1R1US

MTI

Si Wafer (100), N type, P doped, 2" dia x 0.3-0.35 mm, 1SP, R:1-10 ohm.cm-1

MTI

Si Wafer (100), N type, P doped, 2" dia x 0.5 mm, 1SP, R:1-10 ohm.cm

MTI

Si Wafer (100), N type, P doped, 2" dia x 0.5 mm, 2SP, R:1-10 ohm.cm

MTI

Si Wafer (110) 2" dia x 0.5 mm t, 1SP, FZ, Undoped, resistivities: >1,000 ohm-cm - SiUe50D05C1R1000

MTI

Si Wafer (110) 2" dia x 0.5 mm t, 2SP, P type, B doped, R:8-12 ohm-cm